Lighting emitting device with aligned-bonding having alignment patterns

ABSTRACT

A light-emitting device comprises a semiconductor light-emitting stacked layer having a first connecting surface, wherein the semiconductor light-emitting stacked layer comprises a first alignment pattern on the first connecting surface, and a substrate under the semiconductor light-emitting stacked layer, wherein the substrate has a second connecting surface being operable for connecting with the first connecting surface, wherein the substrate comprises a second alignment pattern on the second connecting surface, and the second alignment pattern is corresponding to the first alignment pattern.

REFERENCE TO RELATED APPLICATION

This application claims the right of priority based on TW applicationSerial No. 101107404, filed on Mar. 5, 2012, and the content of which ishereby incorporated by reference in its entirety.

TECHNICAL FIELD

The present application relates to a light-emitting device and themanufacturing method thereof.

DESCRIPTION OF BACKGROUND ART

As the technology develops, the semiconductor optoelectrical device hasa great contribution in information transmission and energy conversion.For example, the semiconductor optoelectrical device can be applied tofiber-optic communication, optical storage and military system.Generally, the semiconductor optoelectrical device can be classified asthree categories according to energy conversion type: convertingelectrical energy to light, such as light-emitting diode and laserdiode; converting light to electrical energy, such as optical detector;converting the radiation energy of light to electrical energy, such assolar cell.

The growth substrate is very important to semiconductor optoelectricaldevices. The semiconductor epitaxial layers of a semiconductoroptoelectrical device are grown on the growth substrate, and the growthsubstrate also provides the supporting function to carry thesemiconductor epitaxial layer. But, different semiconductor epitaxiallayers need different growth substrates. In order to form thesemiconductor epitaxial layer with high quality, it is important tochoose a suitable growth substrate.

However, sometimes a good growth substrate is not a suitable carriersubstrate for carrying the semiconductor epitaxial layer. Taking thelight-emitting diode as an example, in the manufacturing processes ofthe red light diode, in order to form a better semiconductor epitaxiallayer, GaAs substrate is generally selected as the growth substratebecause the lattice constant of GaAs substrate is close to that of thesemiconductor epitaxial layer though GaAs is opaque and has low heatdissipation, which is adverse to the ultra-bright light-emitting diodewhich requires good heat dissipation. Such kind of growth substrate withlow heat dissipation ability would cause the light-emitting efficiencyto decline dramatically.

In order to satisfy the different requirement of the growth substrateand the carrier substrate of semiconductor optoelectrical devices, thesubstrate transfer technology is developed. Namely, the semiconductorepitaxial layer is firstly formed on the growth substrate, and then thesemiconductor epitaxial layer is bonded to the carrier substrate forfurther processing.

The known ultra-bright light-emitting diode is produced by wafer towafer bonding. The bonding layer, which is composed of metal ornon-metal material, is used to bond the semiconductor epitaxial layerand the heat-dissipation substrate together. However, the bonding layerof a single material would limit the flexibility of light-emitting diodedesign and the following wafer level package.

SUMMARY OF THE DISCLOSURE

A light-emitting device comprises a semiconductor light-emitting stackedlayer having a first connecting surface, wherein the semiconductorlight-emitting stacked layer comprises a first alignment pattern on thefirst connecting surface, and a substrate under the semiconductorlight-emitting stacked layer, wherein the substrate has a secondconnecting surface being operable for connecting with the firstconnecting surface, wherein the substrate comprises a second alignmentpattern on the second connecting surface, and the second alignmentpattern is corresponding to the first alignment pattern.

A method of manufacturing a light-emitting device, comprising the stepsof providing a chamber, providing a semiconductor light-emitting stackedlayer having a first connecting surface in the chamber, wherein thesemiconductor light-emitting stacked layer comprises a first alignmentpattern, providing a substrate having a second connecting surface in thechamber, wherein the substrate comprises a second alignment pattern,detecting the position of the first alignment pattern and the positionof the second alignment pattern, and moving at least one of thesubstrate and the semiconductor light-emitting stacked layer to make thefirst alignment pattern be aligned with the second alignment pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically shows an aligned-bonding light-emitting device inaccordance with the first embodiment of the present application;

FIGS. 2A and 2B show an aligned-bonding light-emitting device 200 inaccordance with the second embodiment of the present application;

FIG. 3 shows an aligned-bonding light-emitting device in accordance withthe third embodiment of the present application;

FIG. 4 shows an aligned-bonding light-emitting device in according withthe fourth embodiment of the present application;

FIG. 5 shows an aligned-bonding light-emitting device in accordance withthe fifth embodiment of the present application;

FIGS. 6A to 6D show the method of manufacturing an aligned-bondinglight-emitting device in according with the sixth embodiment of thepresent application;

FIGS. 7A to 7B show the method of manufacturing an aligned-bondinglight-emitting device in according with the seventh embodiment of thepresent application;

FIG. 8 shows an alignment bonding equipment for manufacturing analigned-bonding light-emitting device in according with the eighthembodiment of the present application;

FIG. 9 shows a method of manufacturing an aligned-bonding light-emittingdevice by use of the alignment bonding equipment shown in FIG. 8 inaccording with the ninth embodiment of the present application.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Exemplary embodiments of the present application will be described indetail with reference to the accompanying drawings hereafter. Thefollowing embodiments are given by way of illustration to help thoseskilled in the art fully understand the spirit of the presentapplication. Hence, it should be noted that the present application isnot limited to the embodiments herein and can be realized by variousforms. Further, the drawings are not in precise scale and components maybe exaggerated in view of width, height, length, etc. Herein, thesimilar or identical reference numerals will denote the similar oridentical components throughout the drawings.

First Embodiment

FIG. 1 schematically shows an aligned-bonding light-emitting device 100in accordance with the first embodiment of the present application. Inthe first embodiment, a semiconductor light-emitting stacked layer 2comprises a first semiconductor layer 21, an active layer 22, and asecond semiconductor layer 23. When the first semiconductor layer 21 iscomposed of p-type semiconductor material, the second semiconductorlayer 23 is composed of n-type semiconductor material. Conversely, whenthe first semiconductor layer 21 is composed of n-type semiconductormaterial, the second semiconductor layer 23 is composed of p-typesemiconductor material. The active layer 22, which is between the firstsemiconductor layer 21 and the second semiconductor layer 23, can becomposed of intrinsic semiconductor material. When an electrical currentflows through semiconductor light-emitting stacked layer 2, the activelayer 22 can emit a light. When the active layer 22 is composed ofAl_(a)Ga_(b)In_(1-a-b)P, the active layer 22 can emit a red, orange, oryellow light. When the active layer 22 is composed ofAl_(c)Ga_(d)In_(1-c-d)N, the active layer 22 can emit a blue or greenlight.

The semiconductor light-emitting stacked layer 2 further comprises afirst connecting layer 4. The first connecting layer 4 comprises a firstalignment pattern 10, a first non-alignment region 11 and a firstconnecting surface 32 for aligned-bonding with a substrate 8, whereinthe difference of the reflectivities between the first alignment pattern10 and the first non-alignment region 11 is at least larger than 20%.When the first alignment pattern 10 is composed of the material with thereflectivity larger than 50%, the first non-alignment region 11 iscomposed of the material with the reflectivity smaller than 30%. Thematerial with the reflectivity larger than 50% comprises metal, such asAg, Au, Al, In, Sn, Cr, Ni, Pt or the combination thereof. The materialwith the reflectivity smaller than 30% comprises organic adhesivematerial, such as polyimide, BCB, PFCB, epoxy, acrylic resin, COC, PMMA,PET, PC, polyetherimide, fluorocarbon polymer and silicone; oxidematerial, such as glass, Al₂O₃, SiO₂, TiO₂, SOG, ITO, MgO, InO, SnO,CTO, ATO, AZO, ZTO and ZnO, or other dielectric material, such asSiN_(x).

The substrate 8 is excellent in heat dissipation. The material of thesubstrate 8 comprises ceramic substrate, silicon substrate, siliconcarbide substrate, anodic aluminum substrate, aluminum nitride substrateor composite material substrate. The substrate 8 comprises a secondconnecting layer 6 thereon. The second connecting layer 6 comprises asecond alignment pattern 12, a second non-alignment region 13, and asecond connecting surface 34 for aligned-bonding with the semiconductorlight-emitting stacked layer 2, wherein the difference of thereflectivities between the second alignment pattern 8 and the secondnon-alignment region 13 is at least larger than 20%. When the secondalignment pattern 12 is composed of the material with the reflectivitylarger than 50%, the second non-alignment region 13 is composed of thematerial with the reflectivity smaller than 30%. The material with thereflectivity larger than 50% comprises metal such as Ag, Au, Al, In, Sn,Cr, Ni, Pt or the combination thereof. The material with thereflectivity smaller than 30% comprises organic adhesive material, suchas polyimide, BCB, PFCB, epoxy, acrylic resin, COC, PMMA, PET, PC,polyetherimide, fluorocarbon polymer and silicone; oxide material, suchas glass, Al₂O₃, SiO₂, TiO₂, SOG, ITO, InO, MgO, SnO, CTO, ATO, AZO, ZTOand ZnO, or other dielectric material, such as SiN_(x). By aligning andbonding the second connecting layer 6 and the first connecting layer 4,the substrate 8 and the semiconductor light-emitting stacked layer 2form an aligned-bonding light-emitting device 100.

In the aligned-bonding light-emitting device 100, the first alignmentpattern 10 is corresponding to the second alignment pattern 12. In thefirst embodiment, the first alignment pattern 10 and the secondalignment pattern 12 are overlapped. Specifically, if a first virtualvertical axis 101 passing through the center of the first alignmentpattern 10 and a second virtual vertical axis 121 passing through thecenter of the second alignment pattern 12 have an offset distance 14between thereof, the offset distance 14 is smaller than 20 μm.

Second Embodiment

FIGS. 2A and 2B show an aligned-bonding light-emitting device 200 inaccordance with the second embodiment of the present application. AsFIG. 2A shows, the difference between the aligned-bonding light-emittingdevice 200 and the aligned-bonding light-emitting device 100 disclosedin the first embodiment is the way the first alignment pattern 10corresponds to the second alignment pattern 12. In the secondembodiment, the first alignment pattern 10 and the second alignmentpattern 12 form a third pattern 15, which can be seen as the top view ofAA′ in FIG. 2B.

Third Embodiment

FIG. 3 shows an aligned-bonding light-emitting device 300 in accordancewith the third embodiment of the present application. In the thirdembodiment, a semiconductor light-emitting stacked layer 2 comprises afirst semiconductor layer 21, an active layer 22, and a secondsemiconductor layer 23. When the first semiconductor layer 21 iscomposed of p-type semiconductor material, the second semiconductorlayer 23 is composed of n-type semiconductor material. Conversely, whenthe first semiconductor layer 21 is composed of n-type semiconductormaterial, the second semiconductor layer 23 is composed of p-typesemiconductor material. The active layer 22, which is between the firstsemiconductor layer 21 and the second semiconductor layer 23, can becomposed of intrinsic semiconductor material. When an electrical currentflows through semiconductor light-emitting stacked layer 2, the activelayer 22 can emit a light. When the active layer 22 is composed ofAl_(a)Ga_(b)In_(1-a-b)P, the active layer 22 is able to emit a red,orange, or yellow light. When the active layer 22 is composed ofAl_(c)Ga_(d)In_(1-c-d)N, the active layer 22 can emit a blue or greenlight.

The semiconductor light-emitting stacked layer 2 further comprises afirst connecting surface 32. The first connecting surface 32 comprises aplurality of first cavities 20 and a plurality of first alignmentpatterns 10. The plurality of first cavities 20 can avoid directlycontacting a substrate 8 thereunder so the metallic units do notelectrically contact the substrate 8 and/or is for design considerationof the electrical current spreading routes, while the opening of theplurality of first cavities 20 faces the substrate 8 thereunder. Theplurality of first alignment patterns 10 is on a region of the firstconnection surface 32 where no first cavity 20 is disposed on. Theplurality of first alignment patterns 10 is composed of the materialwith the reflectivity 20% larger than that of the second semiconductorlayer 23 and comprises metal, such as Ag, Au, Al, In, Sn, Cr, Ni, Pt, orthe combination thereof.

The substrate 8 is excellent for heat dissipation. The material of thesubstrate 8 comprises ceramic substrate, silicon substrate, siliconcarbide substrate, anodic aluminum substrate, aluminum nitridesubstrate, or composite material substrate. The substrate 8 comprises asecond connecting layer 6 thereon. The second connecting layer 6comprises a second alignment pattern 12, a second non-alignment region13, and a second connecting surface 34 for aligned-bonding with thesemiconductor light-emitting stacked layer 2, wherein the difference ofthe reflectivities between the second alignment pattern 8 and the secondnon-alignment region 13 is at least larger than 20%. When the secondalignment pattern 12 is composed of the material with the reflectivitylarger than 50%, the second non-alignment region 13 is composed of thematerial with the reflectivity smaller than 30%. The material with thereflectivity larger than 50% comprises metal, such as Ag, Au, Al, In,Sn, Cr, Ni, Pt or the combination thereof. The material with thereflectivity smaller than 30% comprises organic adhesive material, suchas polyimide, BCB, PFCB, epoxy, acrylic resin, COC, PMMA, PET, PC,polyetherimide, fluorocarbon polymer and silicone; oxide material, suchas glass, Al₂O₃, SiO₂, TiO₂, SOG, ITO, InO, MgO, SnO, CTO, ATO, AZO, ZTOand ZnO, or other dielectric material, such as SiN_(x). By aligning andbonding the first connecting surface 32 and the second connectingsurface 34, the substrate 8 and the semiconductor light-emitting stackedlayer 2 are formed to be an aligned-bonding light-emitting device 300.

In the aligned-bonding light-emitting device 300, the first alignmentpattern 10 is corresponding to the second alignment pattern 12. In thethird embodiment, the first alignment pattern 10 and the secondalignment pattern 12 are overlapped. Specifically, if a first virtualvertical axis 101 passing through the center of the first alignmentpattern 10 and a second virtual vertical axis 121 passing through thecenter of the second alignment pattern 12 have an offset distance 14between thereof, the offset distance 14 is smaller than 20 μm.

Fourth Embodiment

FIG. 4 shows an aligned-bonding light-emitting device 400 in accordancewith the fourth embodiment of the present application. In the fourthembodiment, a semiconductor light-emitting stacked layer 2 comprises afirst semiconductor layer 21, an active layer 22, and a secondsemiconductor layer 23. When the first semiconductor layer 21 iscomposed of p-type semiconductor material, the second semiconductorlayer 23 is composed of n-type semiconductor material. Conversely, whenthe first semiconductor layer 21 is composed of n-type semiconductormaterial, the second semiconductor layer 23 is composed of p-typesemiconductor material. The active layer 22, which is between the firstsemiconductor layer 21 and the second semiconductor layer 23, can becomposed of intrinsic semiconductor material. When an electrical currentflows through semiconductor light-emitting stacked layer 2, the activelayer 22 can emit a light. When the active layer 22 is composed ofAl_(a)Ga_(b)In_(1-a-b)P, the active layer 22 can emit a red, orange, oryellow light. When the active layer 22 is composed ofAl_(c)Ga_(d)In_(1-c-d)N, the active layer 22 can emit a blue or greenlight.

The semiconductor light-emitting stacked layer 2 further comprises afirst connecting surface 32. The first connecting surface 32 comprises aplurality of first cavities 20 and a plurality of first alignmentpatterns 10. The plurality of first cavities 20 can avoid directlycontacting a substrate 8 thereunder so the metallic units do notelectrically contact the substrate 8 and/or is for design considerationof the electrical current spreading routes, while the opening of theplurality of first cavities 20 faces the substrate 8 thereunder. Theplurality of first alignment patterns 10 is on a region of the firstconnecting surface 32 where no first cavity 20 is disposed on. Theplurality of first alignment patterns 10 is composed of the materialwith the reflectivity 20% larger than that of the second semiconductorlayer 23 and comprises metal, such as Ag, Au, Al, In, Sn, Cr, Ni, Pt orthe combination thereof.

The substrate 8 is excellent for heat dissipation. The material of thesubstrate 8 comprises ceramic substrate, silicon substrate, siliconcarbide substrate, anodic aluminum substrate, aluminum nitride substrateor composite material substrate. The substrate 8 comprises a secondconnecting surface 34. The second connecting surface 34 comprises aplurality of second cavities 24 and a plurality of second alignmentpatterns 12. The plurality of second cavities 24 can avoid directlycontacting the semiconductor light-emitting stacked layer 2 thereon sothe metallic units do not electrically contact the semiconductorlight-emitting stacked layer 2 and/or is for design consideration of theelectrical current spreading routes, while the opening of the pluralityof second cavities 24 faces the semiconductor light-emitting stackedlayer thereon. The plurality of second alignment patterns 12 is on aregion of the second connecting surface 34 where no second cavity 24 isdisposed on. The plurality of second alignment patterns 12 is composedof the material with the reflectivity 20% larger than that of thesubstrate 8, comprising metal, such as Ag, Au, Al, In, Sn, Cr, Ni, Pt orthe combination thereof. By aligning and bonding the first connectingsurface 32 and the second connecting surface 34, the substrate 8 and thesemiconductor light-emitting stacked layer 2 are formed to be analigned-bonding light-emitting device 400.

In the aligned-bonding light-emitting device 400, the first alignmentpattern 10 is corresponding to the second alignment pattern 12. In thefourth embodiment, the first alignment pattern 10 and the secondalignment pattern 12 are overlapped. Specifically, if a first virtualvertical axis 101 passing through the center of the first alignmentpattern 10 and a second virtual vertical axis 121 passing through thecenter of the second alignment pattern 12 have an offset distance 14between thereof, the offset distance 14 is smaller than 20 μm.

Fifth Embodiment

FIG. 5 shows an aligned-bonding light-emitting device 500 in accordancewith the fifth embodiment of the present application. As FIG. 5 shows,the difference between the fifth embodiment and the fourth embodiment isthat the plurality of first alignment patterns 10 is in a part of theplurality of first cavities 20 to avoid contacting the substrate 8thereunder, and the plurality of second alignment patterns 12 is in apart of the plurality of second cavities 24 to avoid contacting thesemiconductor light-emitting stacked layer 2 thereon.

Sixth Embodiment

FIGS. 6A to 6D show the method of manufacturing an aligned-bondinglight-emitting device in accordance with the sixth embodiment of thepresent application. FIG. 6A schematically shows that a chamber 58 and asemiconductor light-emitting stacked layer 2 is located and fixed on anupper carrier 50 in the chamber 58. The semiconductor light-emittingstacked layer 2 is fixed on the upper carrier 50 so the position of thesemiconductor light-emitting stacked layer 2 can be controlled. Thesemiconductor light-emitting stacked layer 2 comprises a firstsemiconductor layer 21, an active layer 22, and a second semiconductorlayer 23. When the first semiconductor layer 21 is composed of p-typesemiconductor material, the second semiconductor layer 23 is composed ofn-type semiconductor material. Conversely, when the first semiconductorlayer 21 is composed of n-type semiconductor material, the secondsemiconductor layer 23 is composed of p-type semiconductor material. Theactive layer 22, which is between the first semiconductor layer 21 andthe second semiconductor layer 23, can be composed of intrinsicsemiconductor material. When an electrical current flows throughsemiconductor light-emitting stacked layer 2, the active layer 22 canemit a light. When the active layer 22 is composed ofAl_(a)Ga_(b)In_(1-a-b)P, the active layer 22 can emit a red, orange oryellow light. When the active layer 22 is composed ofAl_(c)Ga_(d)In_(1-c-d)N, the active layer 22 can emit a blue or greenlight. The semiconductor light-emitting stacked layer 2 furthercomprises a first connecting layer 4. The first connecting layer 4comprises a first alignment pattern 10, a first non-alignment region 11,and a first connecting surface 32 for aligned-bonding with a substrate8, wherein the difference of the reflectivities between the firstalignment pattern 10 and the first non-alignment region 11 is at leastlarger than 20%. The substrate 8 has excellent heat dissipation abilityand is located and fixed on a lower carrier 52 so the position of thesubstrate 8 is able to be controlled. The material of the substrate 8comprises ceramic substrate, silicon substrate, silicon carbidesubstrate, anodic aluminum substrate, aluminum nitride substrate orcomposite material substrate. The substrate 8 comprises a secondconnecting layer 6 thereon. The second connecting layer 6 comprises asecond alignment pattern 12, a second non-alignment region 13 and asecond connecting surface 34 for aligned-bonding with the semiconductorlight-emitting stacked layer 2, wherein the difference of thereflectivities between the second alignment pattern 8 and the secondnon-alignment region 13 is at least larger than 20%. A first virtualvertical axis 101 passing through the center of the first alignmentpattern 10 and a second virtual vertical axis 121 passing through thecenter of the second alignment pattern 12 comprise an offset distance 14between thereof.

FIG. 6B schematically shows that an image deriving unit 40 is providedbetween the semiconductor light-emitting stacked layer 2 and thesubstrate 8. The image deriving unit 40 comprises an upper imagederiving unit 42 and a lower image deriving unit 44. The upper imagederiving unit 42 is operable for deriving the image of the firstalignment pattern 10, and the lower image deriving unit 44 is operablefor deriving the image of the second alignment pattern 12, wherein theupper image deriving unit 42 and the lower image deriving unit 44 useCCD or COMS to derive image. Then, the image of the first alignmentpattern 10 and the image of the second alignment pattern 12 aretransferred to a controller 46 by an image transferring device 48. Then,the controller 46 compares the image of the first alignment pattern 10and the image of the second alignment pattern 12. And, at the same time,the controller 46 drives the upper carrier 50 and the lower carrier 52by a control signal transferring device 54 and a control signaltransferring device 56 respectively to linearly move or rotate thesemiconductor light-emitting stacked layer 2 and the substrate 8respectively. When the controller 46 detects that the first alignmentpattern 10 and the second alignment pattern 12 are aligned to eachother, the controller 46 is going to stop driving the upper carrier 50and the lower carrier 52, and move the image deriving unit 40 out of thechamber 58, as FIG. 6C shows. In above embodiments, the offset distance14 between the first virtual vertical axis 101 and the second virtualvertical axis 121 is smaller than 20 μm.

FIG. 6D schematically shows that the image deriving unit 40 is movedaway from the chamber 58 and the chamber 58 is vacuumed, wherein the airpressure of the chamber 58 is near 0 kgf/cm². Then, the chamber 58 isheated to at least over 200° C. A bonding force is provided to thesemiconductor light-emitting stacked layer 2 and the substrate 8,wherein the bonding force is not over 1164 Kg/cm², to make the firstconnecting layer 4 be adhered with the second connecting layer 6.

Seventh Embodiment

FIGS. 7A to 7B show the method of manufacturing an aligned-bondinglight-emitting device in accordance with the seventh embodiment of thepresent application. As FIG. 7A schematically shows, the differencebetween the seventh embodiment and the sixth embodiment is that theimage deriving unit 40 comprises a first image deriving unit 41 and asecond image deriving unit 43, wherein the first image deriving unit 41and the second image deriving unit 43 are capable of catching the imagesof different regions of the first alignment pattern 10 of a first wafer71 and the second alignment pattern 12 of a second wafer 72 at the sametime so the time needed for aligning the first alignment pattern 10 andthe second alignment pattern 12 can be shortened. Each of the firstwafer 71 and the second wafer 72 can be a substrate or a semiconductorlight-emitting stacked layer.

As FIG. 7B shows, after the first alignment pattern 10 and the secondalignment pattern 12 being aligned to each other, the first imagederiving unit 41 and the second image deriving unit 43 are moved out ofthe chamber 58 and disposed on the different places.

Eighth Embodiment

FIG. 8 shows an alignment bonding equipment 800 for manufacturing analigned-bonding light-emitting device in accordance with the eighthembodiment of the present application. The alignment bonding equipment800 comprises an upper carrier 50 for carrying a first wafer with afirst alignment pattern, a lower carrier 52 under the upper carrier 50for carrying a second wafer with a second alignment pattern, an angularalignment device 51 connecting with the upper carrier 50 via an angularalignment connector 511, a linear alignment device 531 connecting withthe lower carrier 52 via an linear alignment connector 532, an up-downdevice 535 connecting to the linear alignment device 531, a first imagederiving unit 41 connecting with a first movement device 411 forcatching the images of the first alignment pattern and the secondalignment pattern, a second image deriving unit 43 connecting with asecond movement device 431 for catching the images of the firstalignment pattern and the second alignment pattern, an upper chamber 581enclosing the upper carrier 50, a lower chamber 582 enclosing the lowercarrier 52, a chamber-lift device 583 connecting with the lower chamber582 for raising or lowering the lower chamber 582, and a controller 46electrically connecting with the angular alignment device 51, the linearalignment device 531, the up-down device 535, the first movement device411, the second movement device 431 and the chamber-lift device 583.

The angular alignment device 51 is controlled by the controller 46 torotate the upper carrier 50 via the angular alignment connector 511 foradjusting the angle 512 of the first wafer 71 relative to the secondwafer 72. In one embodiment, the angular alignment device 51 can be aDirect Drive Motor. The linear alignment device 531 is controlled by thecontroller 46 for linearly moving the lower carrier 52 to adjust thehorizontal position of the second wafer 72 relative to the first wafer71. The up-down device 535 is controlled by the controller 46 forraising or lowering the linear alignment device 531, linear alignmentconnector 532, the lower carrier 52, and the second wafer 72, and foradjusting the bonding force between the first wafer 71 and the secondwafer 72. The up-down device 535 comprises an up-down cylinder 533 andan up-down linking structure 534. The up-down cylinder 533 is controlledby the controller 46 to provide a certain power, and the up-down linkingstructure 534 can transfer the certain power to raise or lower thelinear alignment device 531, linear alignment connector 532, the lowercarrier 52, and the second wafer 72, or to adjust the bonding forcebetween the first wafer 71 and the second wafer 72. In the embodiment,the bonding force between the first wafer 71 and the second wafer 72 issmaller than 1164 kg/cm². The first movement device 411 and the secondmovement device 431 are controlled by controller 46 to move the firstimage deriving unit 41 and the second image deriving unit 43respectively to the specific positions. The first image deriving unit 41and the second image deriving unit 43 are operable for deriving theimages of the first alignment pattern of the first wafer 71 and thesecond alignment pattern of the second wafer 72. The upper chamber 581is fixed between the upper carrier 50 and the angular alignment device51. The lower chamber 582, between the lower carrier 52 and the linearalignment device 531, connects with the chamber-lift device 583controlled by the controller 46 to raise or lower the lower chamber 582.The lower chamber 582 can be raised by the chamber-lift device 583 toform a sealed chamber with the upper chamber 581. The first wafer 71 andthe second wafer 72 are in the sealed chamber, and then the sealedchamber is vacuumed, wherein the air pressure of the sealed chamber isnear 0 kgf/cm². In other words, the first wafer 71 and the second wafer72 can be bonded in a vacuum environment.

Ninth Embodiment

FIG. 9 shows a method of manufacturing an aligned-bonding light-emittingdevice by use of the alignment bonding equipment 800 shown in FIG. 8.The first step 901 is disposing a first wafer 71 and a second wafer 72on an upper carrier 50 and a lower carrier 52 respectively. In thesecond step 902, a first image deriving unit 41 and a second imagederiving unit 43 are located in the original position. In the third step903, the image deriving unit 41 and the second image deriving unit 43are moved to catch the images of a first alignment pattern on the firstwafer 71 and a second alignment pattern on the second wafer 72. Next,the fourth step 904 is that an angular alignment device 51 rotates theupper carrier 50, and a linear alignment device 531 linearly moves thelower carrier 52 to align the first alignment pattern and the secondalignment pattern. Next, the fifth step 905 is moving the first imagederiving unit 41 and the second image deriving unit 43 to the originalposition. Next, the sixth step 906 is raising the lower carrier 52 tomake the first wafer 71 contacting the second wafer 72 and to provide abonding force between the first wafer 71 and the second wafer 72. In theseventh step 907, the lower chamber 582 is raised to form a sealedchamber with the upper chamber 581. In the eighth step 908, the sealedchamber is vacuumed. In the ninth step 909, the bonding force betweenthe first wafer 71 and the second wafer 72 is adjusted, for example, tobe smaller than 1164 Kg/cm². Next, the tenth step 910 is heating thefirst wafer 71 and the second wafer 72 over 200° C. to form a bondedwafer. In the eleventh step 911, the first wafer 71 and the second wafer72 are cooled down. Finally, the twelfth step 912 is lowering the lowercarrier and the lower chamber for taking the bonded wafer out.

The foregoing description of preferred and other embodiments in thepresent disclosure is not intended to limit or restrict the scope orapplicability of the inventive concepts conceived by the Applicant. Inexchange for disclosing the inventive concepts contained herein, theApplicant desires all patent rights afforded by the appended claims.Therefore, it is intended that the appended claims include allmodifications and alterations to the full extent that they come withinthe scope of the following claims or the equivalents thereof.

What is claimed is:
 1. A light-emitting device comprising: asemiconductor light-emitting stacked layer having a first connectingsurface, wherein the semiconductor light-emitting stacked layercomprises a first alignment pattern on the first connecting surface; anda substrate under the semiconductor light-emitting stacked layer,wherein the substrate has a second connecting surface, wherein a firstvirtual vertical axis passes through a center of the first alignmentpattern, a second virtual vertical axis passes through a center of thesecond alignment pattern, and an offset alignment having a distancebetween the first virtual vertical axis and the second virtual verticalaxis is smaller than 20 μm such that the first alignment pattern and thesecond alignment pattern are not totally aligned, wherein the firstalignment pattern and the second alignment pattern each comprising aplurality of enclosures.
 2. The light-emitting device according to claim1, wherein the first alignment pattern and the second alignment patternare overlapped or are combined to form a third pattern.
 3. Thelight-emitting device according to claim 1, wherein the difference inthe reflectivities between the first alignment pattern and a region ofthe first connecting surface without the first alignment pattern islarger than 20%, and the difference in the reflectivities between thesecond alignment pattern and a region of the second connecting surfacewithout the second alignment pattern is larger than 20%.
 4. Thelight-emitting device according to claim 1, wherein the substratecomprises a second connecting layer connecting with the first connectingsurface.
 5. The light-emitting device according to claim 1, wherein thesemiconductor light-emitting stacked layer comprises a first connectinglayer connecting with the second connecting surface.
 6. Thelight-emitting device according to claim 1, wherein the first connectingsurface comprises a first cavity and/or the second connecting surfacecomprises a second cavity.
 7. The light-emitting device according toclaim 6, wherein the first alignment pattern is in the first cavityand/or the second alignment pattern is in the second cavity.
 8. Thelight-emitting device according to claim 1, wherein the first alignmentpattern and the second alignment pattern avoid contacting to each other.